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SMD Type
IC MOSFET
MOS Field Effect Transistor 2SK3794
TO-252
+0.15 1.50-0.15
Unit: mm
+0.1 2.30-0.1 +0.8 0.50-0.7
Features
Low On-state resistance RDS(on)1 = 44 mU MAX. (VGS = 10 V, ID = 10 A)
+0.2 9.70-0.2
+0.15 6.50-0.15 +0.2 5.30-0.2
RDS(on)2 = 78 mU MAX. (VGS = 4.0 V, ID = 10 A) Low C iss: C iss = 760 pF TYP. Built-in gate protection diode
+0.1 0.80-0.1
+0.15 0.50-0.15
0.127 max
2.3
+0.15 4.60-0.15
+0.1 0.60-0.1
+0.28 1.50-0.1
+0.25 2.65-0.1
+0.15 5.55-0.15
1 Gate 2 Drain 3 Source
Absolute Maximum Ratings Ta = 25
Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation TA=25 TC=25 Channel temperature Storage temperature * PW 10 s,Duty Cycle 1% Tch Tstg Symbol VDSS VGSS ID Idp * PD Rating 60 20 20 50 1.5 30 150 -55 to +150 Unit V V A A W
Electrical Characteristics Ta = 25
Parameter Drain cut-off current Gate leakage current Gate cut off voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total Gate Charge Gate to Source Charge Gate to Drain Charge Symbol IDSS IGSS VGS(off) Yfs RDS(on)1 RDS(on)2 Ciss Coss Crss ton tr toff tf QG QGS QGD VDD = 48V VGS = 10 V ID =10A ID=10A,VGS(on)=10V,RG=0 ,VDD=30V VDS=10V,VGS=0,f=1MHZ Testconditons VDS=60V,VGS=0 VGS= 20V,VDS=0 VDS=10V,ID=1mA VDS=10V,ID=10A VGS=10V,ID=10A VGS=4.0V,ID=10A 2.5 7.0 3.5 15 35 54 760 150 71 13 170 43 34 17 3.0 4.7 44 78 Min Typ Max 10 10 4.5 Unit A A V S mU mU pF pF pF ns ns ns ns nC nC nC
3.80
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